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40. THEORETICAL ANALYSIS OF THE EFFECT OF IMPURITY ON THE FERMI LEVEL OF SILICON AND GALLIUM ARSENIDE SEMICONDUCTOR MATERIALS by Emmanuel Ifeanyi Ugwu, Ede Israel Chikwado and Kalu Onyikachi Volume 50 (March, 2019 Issue)
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THEORETICAL ANALYSIS OF THE EFFECT OF IMPURITY ON THE FERMI LEVEL OF SILICON AND GALLIUM ARSENIDE SEMICONDUCTOR MATERIALS

Emmanuel Ifeanyi Ugwu1, Ede Israel Chikwado1 and Kalu Onyikachi2

Department of Industrial Physics, Ebonyi State University, Abakaliki, Nigeria.

Federal University Lafia Nasarawa State, Nigeria

 

Abstract

The effective utilization of a semiconductor material depends on the proper fabrication of the material which can be only achieved by doping with the right type and concentration of impurity. Hence, this work explains the effect of impurity on Fermi level of semiconductors illustrating with equations and graphs how the Fermi level shifts when doped with either form of impurity. Also, illustrated is the variation in the behaviour of Fermi level with respect to temperature change. It is therefore found that the Fermi level shifts upwards towards the conduction band as the donor impurity concentration increases and downwards towards the valence band as the acceptor impurity concentration increases. 

Keywords Doping, Impurity, Semiconductor, Fermi level Boltzmann approximation, Concentration, Temperature

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