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Home  >  Volume 33

Fabrication of p-Cu2O/n-Cu2O for Photovoltaic Applications by I. M. Musa and Y. Abdu (Pages 271-276)
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This work presents n-Cu2O/p-Cu2O device for photovoltaic application. The n-type cuprous oxide layer is formed by heating copper foil in 0.1M Cu2SO4 at 80 for one hour and the p-Cu2O layer is formed by thermal oxidation of copper foil at 930. Both the n-Cu2O and the p-Cu2O layers were analyzed by scanning electron microscope SEM and X-ray diffractormeter. The SEM micrographs show that the n-Cu2O layer is composed of smaller grains of different sizes and bigger grains of different orientation for the p- Cu2O samples annealed at 250. The XRD spectra shows that the n-layer is composed of Cu2O prominent reflections along (111) plane at 2θ=36.4o and other smaller reflections along (110) plane at 2θ=29.5o, (200) plane at 2θ=42.3o and (220) plane at 2θ=61.3o. And the p-layer is composed of prominent reflections of Cu2O along (111) plane at 2θ=36.5o, (110) plane at 2θ=30o, (200) plane at 2θ=42.5o and (220) plane at 2θ=62o and also there is CuO reflection along (221) plane at 2θ=74o. Moreover the device shows photoresponse with values of Isc and Voc as recorded in a daylight as, Isc=21μA and Voc=60mV for the cell without annealing and Isc=17 μA and Voc=47mV for the annealed cell which is possibly as a result of effect of annealing on the junction.