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Home  >  Volume 32 (Nov. 2015)

Studies on Theoretical Electron Drift Mobility for Different Donor Concentrations in GaAs as a Function of Temperature by Kwalar B. N. and Dilip D. K. (pages 29-42)
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Abstract

Electronic properties of semiconductors vary greatly with changes in temperature as well as with the changes in the donor and acceptor concentrations of the materials. The theoretical electron drift mobility Tnd of GaAs roughly agrees with the experimental electron drift mobility nd at very low and higher temperatures T. For different donor concentrations, the modeling results obtained for theoretical electron drift mobility Tnd fairly agree with the predicted values at very low (5 – 10K) and very high (400 – 500K) temperatures, but at other temperatures they do not agree. Hence it is observed that the theoretical values of drift mobility of GaAs are the same with the experimental values at very low and very high temperatures. This might be due to a dominant effect called alloy scattering which limits the mobility of electrons and holes. The lower the donor concentration, the greater (more) the exponential curve of Tnd and nd versus T.
Keywords: Semiconductors, donor and acceptor concentrations, modeling results, dominant effect, alloy scattering, exponential curve
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